Affiliation:
1. Semiconductor Engineering, Cheongju University, 298 Daesung-ro Chungwon-ku, Cheongju 360-764, Republic of Korea
Abstract
To understand the contact mechanism from electrical properties of the ZnS TFTs, ZnS was fabricated on SiOC as a gate insulator on a Si substrate. Ohmic contact without a potential barrier increased the leakage current, but Schottky contact decreased the leakage current because of a Schottky barrier (SB). The ZnS TFTs prepared on SiOC with a Schottky contact improved the stability with respect to the reduction of drain voltages. The structural matching between ZnS and SiOC increased the height of SB such as ZnS annealed at 200°C, which made ZnS become an amorphous structure. ZnS/SiOC films with a low SB increased the capacitance and leakage current. The crystallinity orientation of ZnS localized defect states and the drift current owing to the impurity charge carriers caused the leakage current through low SB near zero voltages. But the increment of diffusion currents in a depletion layer increased the SB and then decreased the leakage current. So the electrical properties of devices were improved by a tunneling effect of diffusion currents.
Subject
General Materials Science
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献