Persistent and reversible electrostatic control of doping in graphene/hexagonal boron nitride heterostructures-Reference-Cited by-同舟云学术

Persistent and reversible electrostatic control of doping in graphene/hexagonal boron nitride heterostructures

Published:2020-01-31 Issue:4 Volume:127 Page:044303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Quezada-Lopez E. A.¹,Joucken F.¹^ORCID,Chen H.¹,Lara A.¹,Davenport J. L.¹,Hellier K.¹,Taniguchi T.²,Watanabe K.²^ORCID,Carter S.¹,Ramirez A. P.¹^ORCID,Velasco J.¹^ORCID

Affiliation:

1. Department of Physics, University of California, Santa Cruz, California 95064, USA

2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

National Science Foundation

Core Research for Evolutional Science and Technology

Army Research Office

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5127770

Reference40 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. Epitaxial growth of single-domain graphene on hexagonal boron nitride

3. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

4. One-Dimensional Electrical Contact to a Two-Dimensional Material

5. Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

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