Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors-Reference-Cited by-同舟云学术

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Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors

Published:2011-11 Issue:11 Volume:32 Page:1552-1554
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Wei-Tsung,Lo Shih-Yi,Kao Shih-Chin,Zan Hsiao-Wen,Tsai Chuang-Chuang,Lin Jian-Hong,Fang Chun-Hsiang,Lee Chung-Chun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6056714/06026903.pdf?arnumber=6026903

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