Differential Gain in InGaAsN/GaAs Double Quantum Well Structures by Numerical Simulations-Reference-Cited by-同舟云学术

Differential Gain in InGaAsN/GaAs Double Quantum Well Structures by Numerical Simulations

Published:2008-07-03 Issue: Volume:2008 Page:1-4
ISSN:1687-689X
Container-title:Research Letters in Physics
language:en
Short-container-title:Research Letters in Physics

Author:

Wartak M. S.¹,Weetman P.²,Rusek P.³

Affiliation:

1. Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, ON, Canada N2L 3C5

2. Department of Physics, Royal Military College, Kingston, ON, Canada K7K 7B4

3. Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Poland

Abstract

We performed numerical studies of differential gain in a coupled quantum well structures built from InGaAsN. Differential gain in In0.38Ga0.62As1_yNy/GaAs quantum well structures was determined and analyzed. A 10-band k_p Hamiltonian matrix was used in the calculations and solved self-consistently with Poisson's equation. The effect of Nitrogen composition and barrier thickness on differential gain has been determined. The influence of Nitrogen composition on differential gain is significant whereas barrier effects are modest.

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

Hindawi Limited

Subject

General Physics and Astronomy

Link

http://downloads.hindawi.com/archive/2008/786939.pdf

Reference19 articles.

1. Progress in research into mixed group-V nitride alloys

2. Recent developments in metastable dilute-N III–V semiconductors

3. The effect of well coupling on effective masses in the InGaAsN material system

4. Numerical studies of optical gain of coupled quantum wells based on InGaAsN material system

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