Recent developments in metastable dilute-N III–V semiconductors
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Reference179 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)
3. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
4. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
5. Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy
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1. Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures;Journal of Alloys and Compounds;2018-03
2. Rapid thermal processing chamber for in-situ x-ray diffraction;Review of Scientific Instruments;2015-01
3. In(AsN) mid-infrared emission enhanced by rapid thermal annealing;Infrared Physics & Technology;2015-01
4. Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures;Applied Physics A;2014-11-08
5. Local N environment in the dilute nitrides Ga(N,P), Ga(N,As), and Ga(N,Sb);physica status solidi (b);2013-04
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