Epitaxial Piezoelectric Pb(Zr0.2Ti0.8)O3 Thin Films on Silicon for Energy Harvesting Devices

Author:

Sambri A.12,Isarakorn D.3,Torres-Pardo A.4,Gariglio S.1,Janphuang Pattanaphong3,Briand D.3,Stéphan O.4,Reiner J. W.5,Triscone J.-M.1,de Rooij Nico F.3,Ahn C. H.5

Affiliation:

1. Department of Condensed Matter Physics, (DPMC), University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland

2. Dipartimento di Scienze Fisiche & CNR-SPIN, Università degli Studi di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, 80126 Napoli, Italy

3. The Sensors, Actuators and Microsystems Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue Jaquet-Droz 1, P.O. Box 526, 2002 Neuchâtel, Switzerland

4. Laboratoire de Physique des Solides, Université Paris-Sud, CNRS-UMR 8502, 91405 Orsay, France

5. Department of Applied Physics, Yale University, P.O. Box 208284, New Haven, CT 06520-8284, USA

Abstract

We report on the properties of ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) thin films grown epitaxially on (001) silicon and on the performance of such heterostructures for microfabricated piezoelectric energy harvesters. In the first part of the paper, we investigate the epitaxial stacks through transmission electron microscopy and piezoelectric force microscopy studies to characterize in detail their crystalline structure. In the second part of the paper, we present the electrical characteristics of piezoelectric cantilevers based on these epitaxial PZT films. The performance of such cantilevers as vibration energy transducers is compared with other piezoelectric harvesters and indicates the potential of the epitaxial approach in the field of energy harvesting devices.

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

Hindawi Limited

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