Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory-Reference-Cited by-同舟云学术

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Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

Published:2014-06-30 Issue:26 Volume:104 Page:262407
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Khan Asif,Nikonov Dmitri E.^ORCID,Manipatruni Sasikanth,Ghani Tahir,Young Ian A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4884419

Reference32 articles.

1. Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking

2. Spintronics: Fundamentals and applications

3. Operation and Modeling of Semiconductor Spintronics Computing Devices

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