Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer-Reference-Cited by-同舟云学术

Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

Published:2012 Issue: Volume:2012 Page:1-7
ISSN:1110-662X
Container-title:International Journal of Photoenergy
language:en
Short-container-title:International Journal of Photoenergy

Author:

Lee Sunhwa¹,Park Seungman¹,Park Jinjoo¹,Kim Youngkuk¹,Park Hyeongsik¹^ORCID,Jang Juyeun¹,Shin Chonghoon²,Lee Youn-Jung¹,Baek Seungsin¹,Kim Minbum²,Jung Junhee²,Yi Junsin¹²

Affiliation:

1. School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea

2. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea

Publisher

Hindawi Limited

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics,General Chemistry

Link

http://downloads.hindawi.com/journals/ijp/2012/767248.pdf

Reference13 articles.

1. Dispersion and Absorption in Dielectrics I. Alternating Current Characteristics

2. Extracting the Cole-Cole impedance model parameters without direct impedance measurement

3. Doping and the Fermi Energy in Amorphous Silicon

4. The doping efficiency in amorphous silicon and germanium

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