Modelling of an Esaki Tunnel Diode in a Circuit Simulator-Reference-Cited by-同舟云学术

Modelling of an Esaki Tunnel Diode in a Circuit Simulator

Published:2011 Issue: Volume:2011 Page:1-8
ISSN:0882-7516
Container-title:Active and Passive Electronic Components
language:en
Short-container-title:Active and Passive Electronic Components

Author:

Kriplani Nikhil M.¹,Bowyer Stephen¹,Huckaby Jennifer¹,Steer Michael B.¹

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7914, USA

Abstract

A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://downloads.hindawi.com/journals/apec/2011/830182.pdf

Reference10 articles.

1. High-field-induced degradation in ultra-thin SiO/sub 2/ films

2. Tunnel diodes

3. New Phenomenon in Narrow Germaniump−nJunctions

4. Device and circuit simulation of quantum electronic devices

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