Resistive Switching Characteristics of a SiOxLayer with CF4Plasma Treatment
Author:
Affiliation:
1. Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan
2. Department of Physics, National Kaohsiung Normal University, Kaohsiung 824, Taiwan
Abstract
Publisher
Hindawi Limited
Subject
General Materials Science
Link
http://downloads.hindawi.com/journals/jnm/2014/703463.pdf
Reference22 articles.
1. Reproducible switching effect in thin oxide films for memory applications
2. Resistive switching in transition metal oxides
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4. Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
5. Role of TaON interface for CuxO resistive switching memory based on a combined model
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2. Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering;Journal of Nanoscience and Nanotechnology;2017-01-01
3. A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States;Nano Letters;2016-02-15
4. Nature of the Interstitials in Titanium Dioxide and Their Impact on Transmission Coefficient:Ab InitioCalculations;Journal of Nanomaterials;2015
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