Nature of the Interstitials in Titanium Dioxide and Their Impact on Transmission Coefficient:Ab InitioCalculations

Author:

Li Lei1,Xia Changfu2,Li Wenshi1,Ji Aimin3,Zhu Canyan3,Zhang Lijun3,Wang Ziou1,Yang Jianfeng1,Mao Ling-Feng3ORCID

Affiliation:

1. Institute of Intelligent Structure and System, School of Electronics & Information Engineering, Soochow University, Suzhou 215006, China

2. The 26th Institute of China Electronics Technology Group Corporation, Chongqing 400060, China

3. Institute of Intelligent Structure and System, Soochow University, Suzhou 215006, China

Abstract

Theab initiocalculations about the properties of the interstitials doping in the rutile TiO2and their impact on the transport coefficients are reported. As the doping of the Zr or Ti interstitials in the TiO2, the lattice Ti4+ions acquire the excess electrons so reduced to the Ti3+or Ti2+ions. However, the Cu interstitials could not lose enough electrons to reduce the lattice Ti4+ions. Furthermore, the Ti or Cu interstitials in the ZrO2also are unable to promote the lattice Zr4+ions to form the lattice Zr3+or Zr2+ions. The high transport coefficients are observed in the defected TiO2with the Ti or Zr interstitials as the high concentration of the Ti3+or Ti2+ions. So, the Zr interstitials are the favorable choice for the extra-doping to improve the transport properties in the TiO2-based resistive random access memory.

Funder

National Natural Science Foundation of China

Publisher

Hindawi Limited

Subject

General Materials Science

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