Ellipsometric characterisation of ordered Ga<SUP>0.5</SUP> In<SUP>0.5</SUP> P-Reference-Cited by-同舟云学术

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Ellipsometric characterisation of ordered Ga^0.5 In^0.5 P

Published:1998-12-01 Issue:12 Volume:14 Page:1283-1285
ISSN:0267-0836
Container-title:Materials Science and Technology
language:en
Short-container-title:mats. sci. tech.

Author:

Alsina F.,Garriga M.,Alonso M. I.,Pascual J.,Camassel J.,Glew R. W.

Publisher

Maney Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

2. Stability of the wurtzite-type structure under high pressure: GaN and InN

3. Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation

4. Approximate solution of ellipsometric equations for optically biaxial crystals

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study;Semiconductor Science and Technology;2016-02-18

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