Affiliation:
1. Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu, Taiwan
Abstract
A three-dimensional simulation of the modified two-temperature horizontal Bridgman growth of gallium arsenide crystals has been developed. The computer model solves time-dependent, Navier-Stokes equations with a Boussineq approximation by the finite difference method. A new model of nodal latent heat is adopted for melting and freezing processes. The interface of solid-liquid phases as well as flow and temperature fields of both phases are obtained. The simulation finds that the furnace pulling rate and the heat-loss prevention arrangement has an impact on the shape of the interface. The computed solidification fronts agree with the experimental data successfully. The radiation heat loss in the process plays a major role in the heat-transfer mechanism, which has been taken into consideration to obtain the correct trend for the simulation.
Cited by
3 articles.
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3. For the Growth of 3 Inch D-Shaped GaAs Crystals by a Modified Horizontal Bridgman Process;Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science;1993-05