A modified horizontal Bridgman technique without arsenic zone for growth of GaAs crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. The Effect of Growth Orientation on the Crystal Perfection of Horizontal Bridgman Grown GaAs
2. Growth of Cr doped GaAs single crystals by the gradient freeze method
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Crystal Growth and Magnetic Measurements on Aligned Single Crystals of the Oxides Sr3NiPtO6 and Sr3CuPtO6;Chemistry of Materials;1999-04-20
2. Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique;Crystal Research and Technology;1995
3. For the Growth of 3 Inch D-Shaped GaAs Crystals by a Modified Horizontal Bridgman Process;Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science;1993-05
4. Numerical Simulation of the Modified Two-Temperature Horizontal Bridgman Growth of Gallium Arsenide Crystals inside a Quartz Boat;Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science;1992-03
5. In-situ observation of HB GaAs crystal growth;III-Vs Review;1991-12
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