A low-complexity coding method for mitigating retention errors and read-disturb errors in TLC NAND flash memory
Author:
Affiliation:
1. National Taiwan University of Science and Technology, Taipei, Taiwan, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/3538641.3561489
Reference10 articles.
1. Extremely Biased Error Correction Method to Reduce Read Disturb Errors of 3D-TLC NAND Flash Memories by 60%
2. Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives
3. Word-line batch Vth modulation of TLC NAND flash memories for both write-hot and cold data
4. Alessandro Grossi , Cristian Zambelli , and Piero Olivo . 2014 . Bit Error Rate Analysis in Charge Trapping Memories for SSD Applications. In 2014 IEEE International Reliability Physics Symposium. MY.7.1--MY.7.5. Alessandro Grossi, Cristian Zambelli, and Piero Olivo. 2014. Bit Error Rate Analysis in Charge Trapping Memories for SSD Applications. In 2014 IEEE International Reliability Physics Symposium. MY.7.1--MY.7.5.
5. Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions
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