Improving 3D NAND Flash Memory Lifetime by Tolerating Early Retention Loss and Process Variation
Author:
Affiliation:
1. Carnegie Mellon University, Pittsburgh, PA, USA
2. Carnegie Mellon University, San Jose, CA, USA
3. Seagate Technology, Fremont, CA, USA
4. ETH Zürich & Carnegie Mellon University, Zürich, Switzerland
Funder
Samsung
Huawei
Seagate
Intel
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/3219617.3219659
Reference1 articles.
1. Y. Luo S. Ghose Y. Cai E. F. Haratsch and O. Mutlu "Improving 3D NAND Flash Memory Lifetime by Tolerating Early Retention Loss and Process Variation " POMACS 2018. 10.1145/3219617.3219659 Y. Luo S. Ghose Y. Cai E. F. Haratsch and O. Mutlu "Improving 3D NAND Flash Memory Lifetime by Tolerating Early Retention Loss and Process Variation " POMACS 2018. 10.1145/3219617.3219659
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