Substrate orientation dependence of island nucleation critical thickness in strained heterostructures-Reference-Cited by-同舟云学术

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Substrate orientation dependence of island nucleation critical thickness in strained heterostructures

Published:1999-09-15 Issue:6 Volume:47 Page:701-707
ISSN:0295-5075
Container-title:Europhysics Letters (EPL)
language:
Short-container-title:Europhys. Lett.

Author:

Sanguinetti S,Chiantoni G,Grilli E,Guzzi M,Henini M,Polimeni A,Patané A,Eaves L,Main P. C

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1209/epl/i1999-00446-x/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-01

2. Optical study of high index substrate effect in multilayer InAs/GaAs quantum dot solar cells;Journal of Alloys and Compounds;2016-11

3. Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy;Journal of Crystal Growth;2016-10

4. Site-controlled formation of InGaAs quantum nanostructures-Tailoring the dimensionality and the quantum confinement;Nano Research;2013-02-20

5. Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates;Nanoscale Research Letters;2009-04-05

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