Lateral Growth and Generation of the Pb0 Center in the Initial Oxidation on the Si(100) Surface-Reference-Cited by-同舟云学术

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Lateral Growth and Generation of the Pb0 Center in the Initial Oxidation on the Si(100) Surface

Published:2005 Issue:5 Volume:26 Page:280-287
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

YAMASAKI Takahiro¹,KATO Koichi²,UDA Tsuyoshi³

Affiliation:

1. Device & Materials Laboratories, FUJITSU LABORATORIES Ltd.

2. Advanced LSI Technology Laboratory, Toshiba Corporate Research and Development Center

3. AdvanceSoft Corporation

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

http://www.jstage.jst.go.jp/article/jsssj/26/5/26_5_280/_pdf

Reference23 articles.

1. Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces

2. Electron spin resonance features of interface defects in thermal (100)Si/SiO2

3. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

4. 4) 二子渉,水谷憲和,安田哲二,磯谷順一,山崎聡:応用物理学会秋 (2002) p. 24.

5. Retardation of Sb Diffusion in Si during Thermal Oxidation

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