Heteroepitaxial Growth of InSb Films on V-Grooved Si(001) Substrate
Author:
Affiliation:
1. Graduate School of Science and Engineering, University of Toyama, Japan
2. Venture Business Laboratory, University of Toyama, Japan
Publisher
Surface Science Society Japan
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology
Link
http://www.jstage.jst.go.jp/article/ejssnt/7/0/7_0_669/_pdf
Reference10 articles.
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2. Transport properties of InSb and InAs thin films on GaAs substrates
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4. Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InSb films grown on the V-grooved Si(001) substrate with InSb bilayer;Physics Procedia;2010-01
2. Heteroepitaxial growth of InSb films on the patterned Si(001) substrate;Physics Procedia;2010-01
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