Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method-Reference-Cited by-同舟云学术

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Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method

Published:1993-09-15 Issue:Part 2, No. 9B Volume:32 Page:L1297-L1299
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Otoki Yoohei,Watanabe Masatoshi,Kuma Shoji,Takahashi Susumu,Onishi Masaya,Kashiwa Mikio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heteroepitaxial Growth of InSb Films on V-Grooved Si(001) Substrate;e-Journal of Surface Science and Nanotechnology;2009

2. A Four-Terminal GaAs Multiple-Function Transistor with a Buried Silicon-Doping Quantum Well;Japanese Journal of Applied Physics;1994-10-01

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