Heteroepitaxial growth of InSb films on the patterned Si(001) substrate-Reference-Cited by-同舟云学术

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Heteroepitaxial growth of InSb films on the patterned Si(001) substrate

Published:2010-01 Issue:2 Volume:3 Page:1329-1333
ISSN:1875-3892
Container-title:Physics Procedia
language:en
Short-container-title:Physics Procedia

Author:

Iwasugi T.,Mori M.,Igarashi H.,Murata K.,Saito M.,Maezawa K.

Publisher

Elsevier BV

Subject

General Engineering

Reference4 articles.

1. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

2. Heteroepitaxial Growth of InSb Films on V-Grooved Si(001) Substrate

3. How Si( 001 )–4×3-In reconstruction improves the epitaxial quality of InSb films grown on Si( 001 ) substrates

4. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition;Advances in Materials Science and Engineering;2018-07-08

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