Ab initio energetics of phosphorus impurity in subsurface regions of hydrogenated diamond surfaces
Author:
Affiliation:
1. Research Institute for Computational Sciences, National Institute of Advanced Industrial Science and Technology (AIST), Japan
2. Diamond Research Center, AIST, Japan
Publisher
Surface Science Society Japan
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology
Link
http://www.jstage.jst.go.jp/article/ejssnt/4/0/4_0_124/_pdf
Reference17 articles.
1. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films
2. n-type doping of (001)-oriented single-crystalline diamond by phosphorus
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4. Surface segregation of Sb on Si(100) during molecular beam epitaxy growth
5. Enhanced Solubility of Impurities and Enhanced Diffusion near Crystal Surfaces
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1. Effects of Vacancy and Hydrogen on the Growth and Morphology of N-Type Phosphorus-Doped Diamond Surfaces;Applied Sciences;2021-02-22
2. Investigation of Microwave Plasma during Diamond Doping by Phosphorus Using Optical Emission Spectroscopy;physica status solidi (a);2019-07-24
3. The Effect of Dopants on Diamond Surface Properties and Growth;Topics in Applied Physics;2019
4. Carrier compensation in (001) n-type diamond by phosphorus doping;Diamond and Related Materials;2007-04
5. Energetics of dopant atoms in subsurface positions of diamond semiconductor;Superlattices and Microstructures;2006-10
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