High Quality InSb Films Grown on Si(111) Substrate via InSb Bi-Layer
Author:
Affiliation:
1. Graduate school of Science and Engineering, University of Toyama, Japan
2. Venture Business Laboratory, University of Toyama, Japan
Publisher
Surface Science Society Japan
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology
Link
http://www.jstage.jst.go.jp/article/ejssnt/7/0/7_0_145/_pdf
Reference11 articles.
1. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
2. [3] A. Okamoto, H. Geka, I. Shibasaki, and K. Yoshida, J. Cryst. Growth 278, 604 (2005).
3. In(4× 3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si(001) Substrate
4. Adsorption of Sb on the In-induced surface reconstructions of Si(001) and Si(111) surfaces
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