Characterization of Thick Film Technology for 300°C Packaging

Abstract

Geothermal well logging and instrumentation applications require electronics capable of 300°C operation. SiC device technology enables the design and fabrication of analog circuits that can operate at these temperatures. However, to build functional circuits, an interconnection and packaging technology must be demonstrated to provide interconnectivity between different SiC devices and passive components. For long-term operation, organic based packaging is limited to ∼250°C with careful selection of materials. Thick film technology based on ceramics and metals has potential for higher operating temperatures. In this work the effect of 300°C storage on the adhesion of different thick film Au conductors and a multilayer dielectric have been studied. In addition, the electrical properties of the dielectric have been studied as a function of temperature and of high temperature aging. Assembly technologies: component attach, wire bonding and external lead attach have also been investigated and the results are reported.