Author:
Najim S. A., ,Alyas M. M.,Sulaiman A. A., ,
Abstract
ZnO thin films have been synthesized by chemical vapor deposition technique at substrate temperature 400˚C and doped with Cu at (1,3,5 wt.%). The morphologies of pure and doped ZnO films were investigated by SEM and the grain size was become larger by increasing the amount of Cu doped. From X-ray diffraction measurements, the maximum intensity peak was (002) for ZnO:Cu films at diffraction angle 34.4˚ and crystallized of hexagonal phase. Based on XPS Measurements on the surface of ZnO:Cu films, it has been found that the peak was shift to higher diffraction angle and full width half maximum of the films were become wider with increasing Cu doping. The band gap of ZnO film was 3.3 eV and it was decreased as an increasing of Cu dopant.
Publisher
Virtual Company of Physics
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science,Biomedical Engineering,Atomic and Molecular Physics, and Optics,Structural Biology
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