Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer-Reference-Cited by-同舟云学术

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Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

Published:2014-06 Issue:6 Volume:125 Page:1404-1408
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Prucnal S.¹,Jiao F.²,Reichel D.¹,Zhao K.²,Cornelius S.¹,Turek M.³,Pyszniak K.³,Drozdziel A.³,Skorupa W.¹,Helm M.¹,Zhou S.¹

Affiliation:

1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) P.O. Box 510119, Dresden 01314, Germany

2. State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University Beijing 100871, China

3. Institute of Physics, Maria Curie Skłodowska University, 20-031 Lublin, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Beyond Semiconductors;Flash Lamp Annealing;2019

2. Intense pulsed light processing for photovoltaic manufacturing;Solar Energy Materials and Solar Cells;2018-01

3. Chalcogenide thin films deposited by rfMS technique using a single quaternary target;Applied Surface Science;2017-12

4. The structural evolution of Cu(In,Ga)Se 2 thin film and device performance prepared through a three-stage process;Materials Science in Semiconductor Processing;2016-01

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