The structural evolution of Cu(In,Ga)Se 2 thin film and device performance prepared through a three-stage process-Reference-Cited by-同舟云学术

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The structural evolution of Cu(In,Ga)Se 2 thin film and device performance prepared through a three-stage process

Published:2016-01 Issue: Volume:41 Page:519-528
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Sung Huan-Hsin,Tsai Du-Cheng,Chang Zue-Chin,Chung Te-Ju,Liang Shih-Chang,Chen Erh-Chiang,Shieu Fuh-Sheng

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference83 articles.

1. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

2. Field modulation in Na-incorporated Cu(In,Ga)Se2 (CIGS) polycrystalline films influenced by alloy-hardening and pair-annihilation probabilities

3. Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties

4. Effects of Na on the electrical and structural properties of CuInSe2

5. Defect physics of theCuInSe2chalcopyrite semiconductor

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solar and infrared light sensing comparison of Yb/CIGS photodiode;Sensors and Actuators A: Physical;2022-11

2. Unveiling the impact of Cu content on the physical properties and photovoltaic performance of solution‐processed Cu(In,Ga)Se 2 solar cell absorber;International Journal of Energy Research;2020-12-15

3. Depth profile crystal orientation determination of Cu(In1−xGax)Se2 thin films by GIXRD method applying skin depth theory;Journal of Materials Science: Materials in Electronics;2019-10-23

4. CIGS thin film and device performance produced through a variation Ga concentration during three-stage growth process;Materials Science in Semiconductor Processing;2018-11

5. Varied deposition time of third stage process to fabricate Cu(In,Ga)Se2 absorber layer and device through a three-stage process;Journal of Materials Science: Materials in Electronics;2018-08-06

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