Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions-Reference-Cited by-同舟云学术

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Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

Published:1999-07 Issue:1 Volume:96 Page:137-142
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Datsenko L.¹,Żymierska D.²,Auleytner J.²,Klinger D.²,Machulin V.¹,Klad'ko V.¹,Melnik V.¹,Prokopenko I.¹,Czosnyka T.³,Choiński J.³

Affiliation:

1. Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine

2. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

3. Heavy Ion Laboratory, Warsaw University, Pasteura 5a, 02-093 Warsaw, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray study of silicon crystal structure changes due to implantation with fast nitrogen ions;Journal of Alloys and Compounds;2001-10

2. Structural changes induced by fast nitrogen ions in GaAs single crystals;Journal of Alloys and Compounds;2001-10

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