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Structural changes induced by fast nitrogen ions in GaAs single crystals

  • Published:2001-10 Issue:1-2 Volume:328 Page:112-118
  • ISSN:0925-8388
  • Container-title:Journal of Alloys and Compounds
  • language:en
  • Short-container-title:Journal of Alloys and Compounds

Author:

Żymierska D.,Auleytner J.,Choiński J.,Perchuć L.,Godwod K.,Domagala J.,Adamczewska J.,Paszkowicz W.,Regiński K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of nitrogen ion implantation on the structural, optical and electrical properties of ZnSe thin films;Semiconductor Science and Technology;2006-10-18

2. Nitrogen ion implantation and characterization of tungsten oxide films;SPIE Proceedings;2005-12-28

3. Analysis of nitrogen implanted tin oxide films used in dye-sensitised solar cells;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-03

4. Structural changes induced by implantation with 3 MeV/amu nitrogen ions in GaAs single crystals;Journal of Alloys and Compounds;2004-01

5. Mathematical analysis of the high-resolution reciprocal space map;Journal of Physics D: Applied Physics;2003-04-29
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