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X-ray study of silicon crystal structure changes due to implantation with fast nitrogen ions

  • Published:2001-10 Issue:1-2 Volume:328 Page:237-241
  • ISSN:0925-8388
  • Container-title:Journal of Alloys and Compounds
  • language:en
  • Short-container-title:Journal of Alloys and Compounds

Author:

Żymierska D.,Auleytner J.,Godwod K.,Domagała J.,Datsenko L.,Choiński J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference14 articles.

1. Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

2. Annual Reports, Heavy Ion Laboratory, Warsaw University, Warsaw, 1993–1998.

3. P. Beckmann, A. Spizzichino, The Scattering of Electromagnetic Waves from Rough Surfaces, Pergamon Press, Oxford, 1963.

4. B.B. Mandelbrot, The Fractal Geometry of Nature, Freeman, New York, 1982.

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon;Surface and Coatings Technology;2009-06

2. Strain profile of (001) silicon implanted with nitrogen by plasma immersion;Journal of Applied Physics;2007-05-15

3. Nitrogen ion implantation of silicon in dense plasma focus;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-11

4. Synchrotron X-ray diffraction studies of silicon implanted with high-energy Ar ions after thermal annealing;Journal of Alloys and Compounds;2004-11

5. Structural changes induced by implantation with 3 MeV/amu nitrogen ions in GaAs single crystals;Journal of Alloys and Compounds;2004-01
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