The Simulation of Bragg-Case Section Images οf Dislocations and Inclusions in Aspect of Identification of Defects in SiC Crystals
Author:
Affiliation:
1. Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
2. Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography;Radiation Physics and Chemistry;2013-12
2. X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method;Acta Physica Polonica A;2013-08
3. Synchrotron Diffraction topography in Studying of the Defect Structure in Crystals Grown by the Czochralski Method;Acta Physica Polonica A;2013-08
4. Contrast in transmission X-ray diffraction topographs of growth defects in the core of SrLaGaO4single crystals;Journal of Applied Crystallography;2013-01-17
5. X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses;Radiation Physics and Chemistry;2011-10
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