Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography-Reference-Cited by-同舟云学术

Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography

Published:2013-12 Issue: Volume:93 Page:99-103
ISSN:0969-806X
Container-title:Radiation Physics and Chemistry
language:en
Short-container-title:Radiation Physics and Chemistry

Author:

Wierzchowski W.,Wieteska K.,Klinger D.,Sobierajski R.,Pelka J.B.,Żymierska D.,Balcer T.,Chalupský J.,Gaudin J.,Hájková V.,Burian T.,Gleeson A.J.,Juha L.,Sinn H.,Sobota D.,Tiedtke K.,Toleikis S.,Tschentscher T.,Vyšín L.,Wabnitz H.,Paulmann C.

Publisher

Elsevier BV

Subject

Radiation

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Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate;Optics Express;2016-06-29

2. Synchrotron topographic evaluation of strain around craters generated by irradiation with X-ray pulses from free electron laser with different intensities;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12

3. Silicon Mirrors for High-Intensity X-Ray Pump and Probe Experiments;Physical Review Applied;2014-05-28