Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment-Reference-Cited by-同舟云学术

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Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment

Published:2015-11 Issue:5 Volume:128 Page:887-890
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Andreev V.V.¹,Bondarenko G.G.²,Maslovsky V.M.³,Stolyarov A.A.¹

Affiliation:

1. Bauman Moscow State Technical University, Kaluga Branch 2, Bazhenov St., Kaluga, 248000, Russia

2. National Research University, Higher School of Economics, 20, Myasnitskaya Str., Moscow 101000, Russia

3. Zelenograd Research Institute of Physical Problems, Moscow, 124460, Russia

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modification of MIS Devices by Radio-Frequency Plasma Treatment;Acta Physica Polonica A;2019-08

2. Mechanisms of Surface State Formation at Si/SiO2 Interface in the Nanosized MOS Transistors;Lecture Notes in Mechanical Engineering;2019

3. Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments;Acta Physica Polonica A;2017-08

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