Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1 - xN Quantum Wells-Reference-Cited by-同舟云学术

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Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1 - xN Quantum Wells

Published:2011-05 Issue:5 Volume:119 Page:663-665
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Bardyszewski W.¹,Łepkowski S.P.²,Teisseyre H.²³

Affiliation:

1. Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland

2. Institute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

3. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pressure induced transition of direct to indirect excitons in double quantum well: Effect of Γ-X crossover;Physica E: Low-dimensional Systems and Nanostructures;2021-02

2. Pressure-dependent nonlinear optical properties in a group III–V/II–VI core/shell quantum dot;Phase Transitions;2020-12-01

3. Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells;Journal of Applied Physics;2016-06-07

4. Hydrostatic pressure dependence of excitonic optical transitions in strained wurtzite GaN/AlN quantum disks;Superlattices and Microstructures;2012-12

5. Barrier width and built-in electric field effects on hydrogenic impurity in wurtzite GaN/AlGaN quantum well;Physica E: Low-dimensional Systems and Nanostructures;2011-11

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