Barrier width and built-in electric field effects on hydrogenic impurity in wurtzite GaN/AlGaN quantum well
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
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2. Crystal orientation effects on wurtzite quantum well electromechanical fields;Lars;Phys. Rev. B,2010
3. Influence of growth temperature on AlGaN multiquantum well point defect incorporation and photoluminescence efficiency;Armstrong;Appl. Phys. Lett.,2011
4. Electronic dielectric constants of insulators calculated by the polarization method;Bernardini;Phys. Rev. B,1998
5. Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1−xN Quantum Wells;Bardyszewski;Acta Phys. Pol. A,2011
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2. Effect of the built-in electric field on electron Raman scattering of parabolic InxGa1−xN/GaN quantum dot;Chinese Journal of Physics;2018-10
3. Electronic states in low-dimensional nano-structures: Comparison between the variational and plane wave basis method;Superlattices and Microstructures;2017-04
4. Hydrostatic Pressure and Built-In Electric Field Effects on the Donor Impurity States in Cylindrical Wurtzite GaN/AlxGa1−xN Quantum Rings;Advances in Condensed Matter Physics;2015
5. Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots;Journal of Nanomaterials;2015
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