Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications
Author:
Publisher
Wiley
Subject
Histology,Pathology and Forensic Medicine
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.2009.03264.x/fullpdf
Reference18 articles.
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2. Diffusion marker experiments with rare-earth silicides and germanides: relative mobilities of two atom species;Baglin;J. Appl. Phys.,1981
3. Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals;Bentini;J. Appl. Phys.,1985
4. Selective etching of Pt with respect to PtSi using a sacrificial low temperature germanidation process;Breil;Appl. Phys. Lett.,2007
5. Measurement of low Schottky barrier heights applied to metallic source/drain metal-oxide-semiconductor field effect transistors;Dubois;J. Appl. Phys.,2004
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1. Step by step rare-earth catalyzed SiOx annealing and simultaneous formation of Europium- silicide by low coverage of Eu doped Gd2O3 nanoparticles;Surface Science;2021-02
2. Defect-Free Erbium Silicide Formation Using an Ultrathin Ni Interlayer;ACS Applied Materials & Interfaces;2014-08-14
3. Silicide Formation Process of Er Films with Ta and TaN Capping Layers;ACS Applied Materials & Interfaces;2013-11-25
4. A study on the formation mechanism of ytterbium silicide for Schottky contact applications;Surface and Interface Analysis;2012-04-20
5. Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer;Thin Solid Films;2012-04
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