Microscopy Of Semi-Insulating Gallium Arsenide
Author:
Publisher
Wiley
Subject
Histology,Pathology and Forensic Medicine
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.1980.tb00253.x/fullpdf
Reference12 articles.
1. Etching of dislocations on the low-index faces of GaAs;Abrahams;J. appl. Phys.,1965
2. A simple rotating jet thinning apparatus for producing taper sections and electron microscope specimens from silicon and compound semiconductors;Bicknell;J. Phys. D,1973
3. Carbon, oxygen, and silicon impurities in gallium arsenide;Brozel;J. Phys. D,1978
4. On annealing-induced prismatic dislocation loops and electrical changes in heavily Te-doped GaAs;Hughes;Phys. Stat. Sol. (a),1978
5. Interstitial condensation in n+ GaAs;Hutchinson;J. Mat. Sci.,1975
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