A simple rotating jet-thinning apparatus for producing taper sections and electron microscope specimens from silicon and compound semiconductors-Reference-Cited by-同舟云学术

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A simple rotating jet-thinning apparatus for producing taper sections and electron microscope specimens from silicon and compound semiconductors

Published:1973-11-15 Issue:17 Volume:6 Page:1991-1997
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Bicknell R W

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/6/i=17/a=306/pdf

Reference8 articles.

1. Interpretation of anomalous layers at GaAs n+−n− step junctions

2. Jet Polishing of Semiconductors

3. Optical Constants of Silicon in the Region 1 to 10 ev

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical thinning of III?V compound semiconductors for transmission electron microscopy;Journal of Materials Science;1988-08

2. The microstructure of aluminium thin films on amorphous SiO2;Thin Solid Films;1986-01

3. TEM image contrast from clustering in Ga-In containing III?V alloys;Applied Physics A Solids and Surfaces;1983-05

4. A Study of Inclusions in Indium Phosphide;Journal of The Electrochemical Society;1982-03-01

5. Structural and photoluminescent properties of GaxIn1−xP(x≊0.5) grown on GaAs by molecular beam epitaxy;Journal of Applied Physics;1981-06

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