Interpretation of anomalous layers at GaAs n+−n− step junctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
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2. Chapter 10 Gallium Arsenide Radiation Detectors and Spectrometers;Semiconductors for Room Temperature Nuclear Detector Applications;1995
3. Schottky barrier height modification on high-purity LPE GaAs following a sulphur-based etch;Semiconductor Science and Technology;1993-07-01
4. Photoluminescence of thermally treated n+ Si-doped and semi-insulating Cr-doped GaAs substrates;Journal of Luminescence;1981-01
5. Removal of the high‐resistivity layer at thenonn+liquid phase epitaxial GaAs layer‐substrate interface by controlledinsituetch‐back;Journal of Applied Physics;1980-12
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