Electronic properties and stability of M 2 O 3 (M = Al, Ga, In) and alloy (M x Ga 1‐x ) 2 O 3 in α and β phases: A theoretical study-Reference-Cited by-同舟云学术

Electronic properties and stability of M ₂ O ₃ (M = Al, Ga, In) and alloy (M _x Ga _1‐x ) ₂ O ₃ in α and β phases: A theoretical study

Published:2022-02-24 Issue:6 Volume:105 Page:4554-4563
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J Am Ceram Soc.

Author:

Jia Xubo¹,Jin Wentao¹,Han Han¹,Yu Jinying²,Wu Yelong¹^ORCID

Affiliation:

1. Ministry of Education Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter Shaanxi Province Key Laboratory of Advanced Functional Materials and Mesoscopic Physics School of Physics, Xi'an Jiaotong University Xi’an P. R. China

2. School of Physics Northwest University Xi'an Shaanxi P. R. China

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1111/jace.18412

Reference54 articles.

1. Recent progress in Ga2O3power devices

2. Optical properties of gallium oxide thin films

3. Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

4. MBE grown Ga2O3 and its power device applications

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