Surface relaxation of strained Ga(P,As)/GaP heterostructures investigated by HAADF STEM-Reference-Cited by-同舟云学术

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Surface relaxation of strained Ga(P,As)/GaP heterostructures investigated by HAADF STEM

Published:2017-09-01 Issue:3 Volume:268 Page:239-247
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:Journal of Microscopy

Author:

BEYER ANDREAS¹^ORCID,DUSCHEK LENNART¹,BELZ JÜRGEN¹,OELERICH JAN OLIVER¹,JANDIERI KAKHABER¹,VOLZ KERSTIN¹

Affiliation:

1. Materials Science Center and Faculty of Physics; Philipps-Universität Marburg; Marburg Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jmi.12622/fullpdf

Reference43 articles.

1. Quantitative atomic resolution mapping using high-angle annular dark field scanning transmission electron microscopy;Aert;Ultramicroscopy,2009

2. High angle annular dark field imaging of stacking faults;Amali;Micron,1997

3. Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging;Beyer;Ultramicroscopy,2016a

4. Influence of surface relaxation of strained layers on atomic resolution ADF imaging;Beyer;Ultramicroscopy,2017

5. Local sample thickness determination via scanning transmission electron microscopy defocus series;Beyer;J. Microsc,2016b

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Element specific atom counting for heterogeneous nanostructures: Combining multiple ADF STEM images for simultaneous thickness and composition determination;Ultramicroscopy;2024-05

2. Quantitative composition determination by ADF-STEM at a low-angular regime: a combination of EFSTEM and 4DSTEM;Ultramicroscopy;2022-10

3. Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN;Ultramicroscopy;2022-08

4. Study of interfacial random strain fields in core-shell ZnO nanowires by scanning transmission electron microscopy;Micron;2020-06

5. Composition determination for quaternary III–V semiconductors by aberration-corrected STEM;Ultramicroscopy;2019-11

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