Quantitative atomic resolution mapping using high-angle annular dark field scanning transmission electron microscopy-Reference-Cited by-同舟云学术

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Quantitative atomic resolution mapping using high-angle annular dark field scanning transmission electron microscopy

Published:2009-09 Issue:10 Volume:109 Page:1236-1244
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Van Aert S.,Verbeeck J.,Erni R.,Bals S.,Luysberg M.,Dyck D. Van,Tendeloo G. Van

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Detector geometry, thermal diffuse scattering and strain effects in ADF STEM imaging

2. Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs

3. Optimal experimental design of STEM measurement of atom column positions

4. Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution

5. An approach to quantitative compositional profiling at near-atomic resolution using high-angle annular dark field imaging

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