High-Speed Preparation of <111>- and <110>-Oriented β-SiC Films by Laser Chemical Vapor Deposition-Reference-Cited by-同舟云学术

High-Speed Preparation of <111>- and <110>-Oriented β-SiC Films by Laser Chemical Vapor Deposition

Published:2013-12-14 Issue:3 Volume:97 Page:952-958
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Zhang Song¹²,Xu Qingfang¹,Tu Rong¹²,Goto Takashi²,Zhang Lianmeng¹

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing; Wuhan University of Technology; 122 Luoshi Road Wuhan 430070 China

2. Institute for Materials Research; Tohoku University; 2-1-1 Katahira, Aoba-ku Sendai 980-8577 Japan

Funder

National Natural Science Foundation of China

Ministry of Education, Culture, Sports, Science and Technology, Grant-in-Aid for Scientific Research

Wuhan University of Technology

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.12706/fullpdf

Reference48 articles.

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2. Superhard and Tougher SiC/Diamond-Like-Carbon Composite Films Produced by Electron Beam Physical Vapor Deposition;Zhao;Acta Mater.,2009

3. Silicon Carbide as a Platform for Power Electronics;Eddy;Science,2009

4. Growth of Epitaxial 3C-SiC Films on Si(100) via Low Temperature SiC Buffer Layer;Lien;Cryst. Growth Des.,2009

5. Epitaxial Growth of 3C-SiC Films on 4 in. diam (100) Silicon Wafer by Atmospheric Pressure Chemical Vapor Deposition;Zorman;J. Appl. Phys.,1995

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