Two-dimensional profiling of carriers in terahertz quantum cascade lasers using calibrated scanning spreading resistance microscopy and scanning capacitance microscopy-Reference-Cited by-同舟云学术

Two-dimensional profiling of carriers in terahertz quantum cascade lasers using calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

Published:2013-04-18 Issue:1 Volume:251 Page:35-44
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:Journal of Microscopy

Author:

DHAR R.S.¹,BAN D.¹

Affiliation:

1. Department of Electrical and Computer Engineering; Waterloo Institute for Nanotechnology; University of Waterloo; Waterloo Ontario N2L3G1 Canada

Funder

National Science and Engineering Research Council (NSERC) of Canada

Canadian Foundation of Innovation

Ontario Research Fund

Canadian Microelectronics Canada (CMC) Microsystems

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jmi.12040/fullpdf

Reference48 articles.

1. Doping in quantum cascade lasers. II. GaAs/Al0.15Ga0.85As terahertz devices;Ajili;J. Appl. Physiol.,2006

2. Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: calibrated scanning spreading resistance microscopy and scanning capacitance microscopy;Ban;J. Vac. Sci. Technol. B,2002a

3. Two-dimensional transverse cross-section nanopotentiometry of actively driven buried-heterostructure multiple-quantum-well lasers;Ban;J. Vac. Sci. Technol. B,2002b

4. Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy;Ban;Appl. Phys. Lett.,2002c

5. Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy;Ban;Appl. Phys. Lett.,2003

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