Doping in quantum cascade lasers. II. GaAs∕Al0.15Ga0.85As terahertz devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2234805
Reference15 articles.
1. Terahertz semiconductor-heterostructure laser
2. Low-threshold terahertz quantum-cascade lasers
3. Effect of free-carrier absorption on the threshold current density of GaAs∕(Al,Ga)As quantum-cascade lasers
4. Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density
5. Mechanisms of dynamic range limitations in GaAs∕AlGaAs quantum-cascade lasers: Influence of injector doping
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1. Doping study of two-well resonant-phonon terahertz quantum cascade lasers part I: doping profile dependence;Japanese Journal of Applied Physics;2023-03-01
2. Increasing the output power of a heavily doped terahertz quantum cascade laser by avoiding the subband misalignment;Journal of Applied Physics;2022-11-07
3. Over One Watt Output Power Terahertz Quantum Cascade Lasers by Using High Doping Concentration and Variable Barrier‐Well Height;physica status solidi (RRL) – Rapid Research Letters;2022-05-20
4. Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology;Progress in Crystal Growth and Characterization of Materials;2020-05
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