Growth of Highly Conformal TiC x Films Using Atomic Layer Deposition Technique-Reference-Cited by-同舟云学术

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Growth of Highly Conformal TiC x Films Using Atomic Layer Deposition Technique

Published:2013-03-22 Issue:4 Volume:96 Page:1060-1062
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Hong Tae Eun¹,Choi Sang-Kyung²,Kim Soo-Hyun²,Cheon Taehoon³

Affiliation:

1. Busan Center; Korea Basic Science Institute; 1275 Jisadong Gangseogu Busan 618-230 Korea

2. School of Materials Science and Engineering; Yeungnam University; Gyeongsangbuk-do 712-749 Korea

3. Center for Core Research Facilities; Daegu Gyeongbuk Institute of Science & Technology; Sang-ri, Hyeonpung-myeon Dalseong-gun Daegu 711-873 Korea

Funder

KBSI

Converging Research Center

Ministry of Education, Science and Technology

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.12289/fullpdf

Reference15 articles.

1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Zhang;Crit. Rev. Solid State Sci.,2003

2. Ultrathin Diffusion Barriers Liners for Gigascale Copper Metallization;Kaloyeros;Annu. Rev. Mater. Sci.,2000

3. Characteristics of the Nanoscale Titanium Film Deposited by Plasma Enhanced Chemical Vapor Deposition and Comparison of the Film Properties with the Film by Physical Vapor Deposition;Lee;J. Vac. Sci. Technol., B,2006

4. Characterization of Sputtered Titanium Carbide Film as Diffusion Barrier for Copper Metallization;Wang;J. Electrochem. Soc.,2001

5. On the Thermal Stability of Atomic Layer Deposited TiN as Gate Electrode in MOS Devices;Westlinder;IEEE Electron Device Lett.,2003

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3. Conformal chemical vapor deposition of boron-rich boron carbide thin films from triethylboron;Journal of Vacuum Science & Technology A;2023-01

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