High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors-Reference-Cited by-同舟云学术

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

Published:2015 Issue:6 Volume:135 Page:192-198
ISSN:1341-8939
Container-title:IEEJ Transactions on Sensors and Micromachines
language:en
Short-container-title:IEEJ Trans. SM

Author:

Iwamatsu Shinnosuke¹,Abe Yutaka¹,Yahagi Toru¹,Kobayashi Seiya¹,Takechi Kazushige²,Tanabe Hiroshi²

Affiliation:

1. Yamagata Research Institute of Technology

2. NLT Technologies, Ltd.

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

https://www.jstage.jst.go.jp/article/ieejsmas/135/6/135_192/_pdf

Reference16 articles.

1. (1) K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono : “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature, Vol. 432, No. 25 pp. 488-492 (2004)

2. (2) K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono : “Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors”, Japanese Journal of Applied Physics, Vol. 45, No. 5B, pp. 4303-4308 (2006)

3. (3) S. Iwamatsu, K. Takechi, T. Yahagi, Y. Abe, H. Tanabe, and S Kobayashi : “Fabrication of suspended amorphous indium-gallium-zinc oxide thin-film transistors using bulk micromachining techniques”, Japanese Journal of Applied Physics, Vol. 53, No. 6, pp. 066503-066509 (2014)

4. (4) T. Kawamura, H. Wakana, K. Fujii, H. Ozaki, K. Watanabe, T. Yamazoe, H. Uchiyama, and K. Torii : “Oxide TFT Rectifier Achieving 13.56-MHz Wireless Operation”, IEEE Trans. Electron Devices, Vol. 59, No. 11, pp. 3002-3008 (2012)

5. (5) H.-W. Zan, C.-H. Li, C.-C. Yeh, M.-Z. Dai, H.-F. Meng, and C.-C. Tsai : “Room-temperture-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors”, Applied Physics Letters, Vol. 98, No. 25, pp. 253503-253505 (2011)

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