Drift Control and Vgs-output Response of High-sensitivity a-InGaZnO TFT pH Sensors
Author:
Affiliation:
1. Yamagata Research Institute of Technology
2. NLT Technologies, Ltd.
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
https://www.jstage.jst.go.jp/article/ieejsmas/137/3/137_89/_pdf
Reference16 articles.
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2. (2) H.-W. Zan, C.-H. Li, C.-C. Yeh, M.-Z. Dai, H.-F. Meng, and C.-C. Tsai : “Room-temperture-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors”, Applied Physics Letters, Vol. 98, No. 25, pp. 253503-253505 (2011)
3. (3) Y.-H. Taia, H.-L. Chiub, and L.-S. Choub : “Active matrix touch sensor detecting time-constant change implemented by dual-gate IGZO TFTs”, Solid-State Electronics, Vol. 72, No. 1, pp. 67-72 (2012)
4. (4) K. Takechi, M. Nakata, K. Azuma, H. Yamaguchi, and S. Kaneko : “Dual-Gate Characteristics of Amorphous Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors”, Electron Devices, IEEE Transactions, Vol. 56, No. 9, pp. 2027-2033 (2009)
5. (5) K. Takechi, S. Iwamatsu, T. Yahagi, Y. Watanabe, S. Kobayashi, and H. Tanabe : “Characterization of top-gate effects in amorphous InGaZnO4 thin-film transistors using a dual-gate structure”, Japanese Journal of Applied Physics, Vol. 51, No. 10R, pp. 104201-104207 (2012)
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