Evaluation of Internal Structure of GaN High Electron Mobility Transistor-Reference-Cited by-同舟云学术

Evaluation of Internal Structure of GaN High Electron Mobility Transistor

Published:2022-12-01 Issue:12 Volume:142 Page:316-324
ISSN:1341-8939
Container-title:IEEJ Transactions on Sensors and Micromachines
language:en
Short-container-title:IEEJ Trans. SM

Author:

Kato Keiichiro¹,Yamamoto Hidekazu¹,Satoh Nobuo¹

Affiliation:

1. Chiba Institute of Technology

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

https://www.jstage.jst.go.jp/article/ieejsmas/142/12/142_316/_pdf

Reference33 articles.

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2. (2) M. Sato : “Thermal Power Generation Technologies”, Journal of the Combustion Society of Japan, Vol. 53, No. 165, pp. 159-164 (2011) (in Japanese)

3. (3) 山本秀和・佐藤宣夫・橋詰保：「総論」, 電学誌, Vol. 137, No. 10, pp. 673-674 (2017)

5. (5) 山本秀和：「パワーデバイス用Si結晶」, 電学誌, Vol. 137, No. 10, pp. 675-676 (2017)

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