Development of Current Detecting Circuit with Wiring Inductance of Power Semiconductor Module
Author:
Affiliation:
1. National Institute of Technology, Ibaraki College
2. Hitachi Power Semiconductor Device, Ltd.
3. Nagaoka University of Technology
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering
Link
https://www.jstage.jst.go.jp/article/ieejias/138/8/138_676/_pdf
Reference6 articles.
1. (1) K. Ishikawa, et al.: “Development of 600V Driver IC for Large-Current IGBT Using New Short-Circuit Protection”, IEEJ Trans. Ind. Appl., Vol. 134, No. 9, pp. 807-814 (2014) (in Japanese)
2. (2) S. Okamoto, et al.: “An Application of a Physics-based IGBT Model to a Protection Circuit for Short-Circuit Conditions”, IEEJ Trans. Ind. Appl., Vol. 134, No. 10, pp. 853-862 (2014) (in Japanese)
3. (3) K. Sasagawa, et al.: “Study on Gate-Controlled Protection Methods for IGBTs Under A Short-Circuit Condition”, IEEJ Trans. Ind. Appl., Vol. 127, No. 5, pp. 478-484 (2007) (in Japanese)
4. (4) K. Katoh, et al.: “Converter using SiC-MOSFET for Ultra High-speed Elevator”, IEEJ Trans. Ind. Appl., Vol. 137, No. 4, pp. 334-341 (2017) (in Japanese)
5. (6) T. Tanimura, et al.: “Full Digital Short Circuit Protection for Advanced IGBTs”, Proc. ISPSD'11, pp. 60-63 (2011)
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Current detection circuit in multiple parallel connection circuit of high‐power semiconductor modules;Electrical Engineering in Japan;2021-10-09
2. Current Detection Circuit in Multiple Parallel Connection Circuit of High-Power Semiconductor Modules;IEEJ Transactions on Industry Applications;2021-07-01
3. Basic Study of Dead-Timeless Control Technology for SiC-MOSFET Applying Current Detection Circuit Using Wiring Inductance of Semiconductor Device;IEEJ Transactions on Industry Applications;2021-07-01
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